Monolithic Integration of Si-CMOS and III-V-on-Si Through Direct Wafer Bonding Process
Integration of silicon-complementary metal oxide-semiconductor (Si-CMOS) and Handbags III-V compound semiconductors (with device structures of either InGaAs HEMT, AlGaInP LED, GaN HEMT, or InGaN LED) on a common Si substrate is demonstrated.The Si-CMOS layer is temporarily bonded on a Si handle wafer.Another III-V/Si substrate is then bonded to the